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| MICROWAVE CORPORATION v00.0304 HMC462LP5 Features Noise Figure: 2.5 dB @ 10 GHz Gain: 13 dB P1dB Output Power: +14.5 dBm @ 10 GHz Self-Biased: +5.0V @ 66 mA 50 Ohm Matched Input/Output 25 mm2 Leadless SMT Package GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz 8 AMPLIFIERS - SMT Typical Applications The HMC462LP5 Wideband LNA is ideal for: * Telecom Infrastructure * Microwave Radio & VSAT * Military EW, ECM & C3I * Test Instrumentation * Fiber Optics Functional Diagram General Description The HMC462LP5 is a GaAs MMIC PHEMT Low Noise Distributed Amplifier in a leadless 5 x 5 mm surface mount package which operates between 2 and 20 GHz. The self-biased amplifier provides 13 dB of gain, 2.5 to 3.5 dB noise figure and +14.5 dBm of output power at 1 dB gain compression while requiring only 66 mA from a single +5V supply. Gain flatness is excellent from 6 - 18 GHz making the HMC462LP5 ideal for EW, ECM RADAR and test equipment applications. The wideband amplifier I/Os are internally matched to 50 Ohms and are internally DC blocked. Electrical Specifications, TA = +25 C, Vdd= 5V Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) (Vdd= 5V) 12 12 Min. Typ. 2.0 - 6.0 14 0.5 0.015 3.0 15 12 15 17 26 66 11 0.025 4.0 11 Max. Min. Typ. 6.0 - 14.0 13 0.5 0.02 2.5 13 12 14 16 25 66 9 0.03 4.0 10 Max. Min. Typ. 14.0 - 20.0 12 0.5 0.03 4.0 11 8 12 15 22 66 0.04 6.0 Max. Units GHz dB dB dB/ C dB dB dB dBm dBm dBm mA 8 - 256 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0304 MICROWAVE CORPORATION HMC462LP5 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz Gain & Return Loss 20 15 10 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) S21 S11 S22 Gain vs. Temperature 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -40C 8 AMPLIFIERS - SMT 8 - 257 Input Return Loss vs. Temperature 0 INPUT RETURN LOSS (dB) -5 -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -40C Output Return Loss vs. Temperature 0 OUTPUT RETURN LOSS (dB) +25C +85C -40C GAIN (dB) -5 -10 -15 -20 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 -5 REVERSE ISOLATION (dB) -10 -20 -25 -30 -35 -40 -45 -50 -55 -60 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -40C Noise Figure vs. Temperature 10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -40C -15 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0304 MICROWAVE CORPORATION HMC462LP5 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz 8 AMPLIFIERS - SMT GaAs MMIC SUB-HARMONICALLY Psat vs. Temperature PUMPED MIXER P1dB vs. Temperature 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 0 2 4 6 8 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 0 2 4 6 8 17 - 25 GHz P1dB (dBm) +25C +85C -40C Psat (dBm) +25C +85C -40C 10 12 14 16 18 20 22 10 12 14 16 18 20 22 FREQUENCY (GHz) FREQUENCY (GHz) Output IP3 vs. Temperature 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 0 2 4 6 8 Gain, Power, Noise Figure & Supply Current vs. Supply Voltage @ 10 GHz GAIN (dB), P1dB (dBm), Noise Figure (dB) 22 20 18 16 14 12 10 8 6 4 2 0 4.5 5 Vdd (Vdc) Gain P1dB Noise Figure 72 70 68 66 64 Idd (mA) 62 60 58 Idd OIP3 (dBm) +25C +85C -40C 56 54 52 50 5.5 10 12 14 16 18 20 22 FREQUENCY (GHz) Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFin)(Vdd = +5.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 C) (derate 50 mW/C above 85 C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +9.0 Vdc +23 dBm 150 C 3.25 W Typical Supply Current vs. Vdd Vdd (V) +4.5 +5.0 +5.5 +7.5 Idd (mA) 66 67 68 71 72 73 20 C/W -65 to +150 C -40 to +85 C +8.0 +8.5 8 - 258 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0304 MICROWAVE CORPORATION HMC462LP5 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz Outline Drawing 8 AMPLIFIERS - SMT NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 3. DIE THICKNESS IS 0.004 (0.100) 4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. BOND PAD METALIZATION: GOLD Pad Descriptions Pad Number 5 Function RFIN Description This pad is AC coupled and matched to 50 Ohms from 2.0 - 20.0 GHz. This pad is AC coupled and matched to 50 Ohms from 2.0 - 20.0 GHz. Interface Schematic 21 RFOUT 30 Vdd Power supply voltage for the amplifier. External bypass capacitors are required. Ground Paddle 1-4, 6-20, 2229, 31, 32 GND Ground paddle must be connected to RF/DC ground. N/C No connection. These pins may be connected to RF ground. Performance will not be affected. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 259 v00.0304 MICROWAVE CORPORATION HMC462LP5 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz 8 AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 108338* Item J1 - J2 J3 C1 C2 C3 U1 PCB** Description PC Mount SMA Connector 2 mm Molex Header 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 4.7 F Capacitor, Tantalum HMC462LP5 108336 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. ** Circuit Board Material: Rogers 4350 * Reference this number when ordering complete evaluation PCB. 8 - 260 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0304 MICROWAVE CORPORATION HMC462LP5 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz Notes: 8 AMPLIFIERS - SMT For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 261 |
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